NCE75H21TB Datasheet, MOSFET, NCE Power

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NCE75H21TB Features and benefits

* VDS = 75V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V (Typ3.3mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.

NCE75H21TB Application

General Features
* VDS = 75V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V (Typ3.3mΩ)
* Special process technology for .

NCE75H21TB Description

The NCE75H21TB uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 75V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V (Typ3.3mΩ)
* Spe.

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